[感恩][Acknowledgments] Landau quantization in buckled monolayer GaAs

5月 18, 2017

獻慶來分享一下最近的學術研究主題，以及感恩。

感恩

文章的末端，通常是"致謝(Acknowledgments)"的部分。在這裡獻慶除了感謝國家的部分經費支援外，同時感謝在這段期間跟獻慶討論過相關主題，以及提供經濟援助的親友們。沒有你們，不會有如此的成果，感恩!

特別是獻慶最近不管是照顧小BB、或是處理家中的緊急狀況，不僅心力交瘁，也會有種一個人獨自步在黑暗中，不見光明的感覺。

儘管精神狀況不是很好，寫作也是斷斷續續、恍恍惚惚、清醒到能整理論文的時間不多、有時還夢到論文內容(託夢... ?!)，也不跟人交談、不接電話、不回LINE、FB也都暫停一陣子了、聽不到別人說的話。

有時沒有跟關心獻慶的你們互動，抱歉了!

但持續的堅持，使得寫作能暫告一段落。在文章的最後，思考致謝內容的同時，獻慶回想到各位的關心與幫忙，特別溫暖。

獻慶想: "當我們把目光放大一點，超過心中那一點冷冽的黑暗，將看到自己是行走在和煦的光明之中，蒙受祝福!"

感謝各位! ^_^

PS: 當然，不在文中的人、事、物，獻慶也同時感謝。畢竟文中能放的人事物需要跟論文直接相關。

在此節錄部分的"致謝"內容，並附上中文名稱:

We would like to thank all the contributors to this article for their valuable discussions and recommendations, especially Geng-Ming Hu (胡耿銘), Matisse Wei-Yuan Tu (涂維元), Ping-Yuan Lo (羅炳蒝), and Yu-Ming Wang (王欲銘). The authors thank Pei-Ju Chien (簡珮如) for English discussions and corrections. One of us (Hsien-Ching Chung) thanks Ming-Hui Chung (鍾明輝), Su-Ming Chen (陳素敏), Lien-Kuei Chien (簡聯貴), Mi-Lee Kao (高蜜李), and Fu-Long Chen (陳富隆) for financial support. This work was supported in part by the Gin Wen Town Printing Company (精文堂印刷廠), Taichung, Taiwan.

關於學術研究主題

最近研究的主題為"Landau quantization in buckled monolayer GaAs"，中文為"在單層皺褶GaAs中的藍道化現象"。

Abstract:

Magneto-electronic properties of buckled monolayer GaAs are studied by the developed generalized tight-binding model, considering the buckled structure, multi-orbital chemical bondings, spin-orbit coupling, electric field, and magnetic field simultaneously. Three groups of spin-polarized Landau levels (LLs) near the Fermi level are induced by the magnetic quantization, whose initial energies, LL degeneracy, energy spacings, magnetic-field-dependence, and spin polarization are investigated. The Landau state probabilities describing the oscillation patterns, localization centers, and node regularities of the dominated/minor orbitals are analyzed, and their energy-dependent variations are discussed. The given density of states directly reflects the main features of the LL energy spectra in the structure, height, number, and frequency of the spin-polarized LL peaks. The electric field causes the monotonous/nonmonotonous LL energy dispersions, LL crossing, gap modulation, phase transition and spin splitting enhancement. The complex gap modulations and phase transitions based on the competition between magnetic and electric fields are explored in detail by the phase diagram. The field-controlled gap modulations and phase transitions are helpful in designing the top-gated and phase-change electronic devices. These predicted magneto-electronic properties could be verified by scanning tunneling spectroscopy measurements.

摘要:

單層皺褶GaAs的磁電子性質將使用廣義化緊束模型來研究，其中、皺褶結構、多軌域的化學鍵結、自旋-軌域耦合、電場及磁場將同步地被考慮。磁量子化現象導致在費米能附近有三群自旋極化的藍道能階，其起始能量、藍道能階簡併度、能量差距、能階能量對磁場的關係、以及自旋極化將被調查。用來描述震盪樣式、局域化中心、主導/次要軌域節點規則的藍道態機率密度將被分析，他們隨能量的變化也同時來討論。文中的態密度直接反映藍道能譜的主要特色於自旋極化藍道峰的結構、高度、數量、及頻率上。電場造成單調的/非單調的藍道能量色散、藍道能階交錯、能隙調變、相轉換、以及自旋分裂的強化。由磁場及電場之間的競爭所導致的複雜能隙調變及相變化將以相圖來進行詳細地討論。場調控的能隙調變及相轉換的特性有助於於設計頂閘及相變化電子元件。這些預測的磁電子性質能以掃描穿隧能譜實驗來驗證。

該主題的研究文章，目前已放在美國康乃爾大學的電子圖書館(Cornell University Library)。

有興趣的人請參考: https://arxiv.org/abs/1705.06016

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